Simulation of self-diffusion on silicon
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K.E. Khor; S. Das Sarma
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Article
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1987
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Elsevier Science
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English
โ 370 KB
The self-diffusion of tetrahedrally bonded materials on different surfaces, (loo), ( 110) and ( 111) is studied by means of molecular dynamics simulation. We use the Stillinger-Weber three-body potential as the only interaction between atoms. The results are compared with experimental measurements a