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Simulation of self-diffusion on silicon surface using stillinger-weber potential

โœ Scribed by K.E. Khor; S. Das Sarma

Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
370 KB
Volume
134
Category
Article
ISSN
0009-2614

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โœฆ Synopsis

The self-diffusion of tetrahedrally bonded materials on different surfaces, (loo), ( 110) and ( 111) is studied by means of molecular dynamics simulation. We use the Stillinger-Weber three-body potential as the only interaction between atoms. The results are compared with experimental measurements and other simulations studies. They indicate that the Stillinger-Weber potential may have to be modified near the surface. Our results indicate that dimer diffusion in silicon may be comparable to single-adatom diffusion.

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