A model of the chemical vapor deposition of Si1−x−yGexCy films from silane, germane and methyl silane

✍ Scribed by M.W. Stoker; T. Merchant; A. Morton; J. Hildreth

• Book ID: 104305945
• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 531 KB
• Volume: 69
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(03)00356-3

✦ Synopsis

A model has been developed for the chemical vapor deposition of epitaxial Si

Ge C films from SiH , GeH and 12x 2y x y 4 4 SiH CH . The model is based on a simplified chemical mechanism including adsorption and decomposition of SiH , GeH 3 3 4 4 and H on vacant Si or Ge sites and subsequent H desorption. The model focuses on effects at relatively high pressures 2 2

(i.e., 1-200 Torr) where suppression of deposition by adsorbed hydrogen becomes important, resulting in an inverse dependence of the deposition rate on pressure and giving rise to a strong dependence of Ge concentration on the deposition temperature. The model assumes that this temperature dependence is due to the influence of adsorbed hydrogen on segregation of Ge to the surface and the relative concentration of vacant Si and Ge sites. The model also includes a simple treatment of carbon incorporation from SiH CH . The model predictions of deposition rate, Ge content and both total and 3 3 substitutional carbon content compare favorably with experimental data over a wide range of conditions.