The paper provides an extension to the one-dimensional TLM diffusion model. The extended diffusion node presented here models the exact transport equation with diffusion drift and recombination of charge carriers in semiconductors. A general algorithm for providing a numerical solution to the transp
β¦ LIBER β¦
A model of nonequilibrium charge-carrier recombination in semiconductors containing nonuniformities
β Scribed by Lugakov, P. F. ;Shusha, V. V.
- Publisher
- John Wiley and Sons
- Year
- 1984
- Tongue
- English
- Weight
- 245 KB
- Volume
- 86
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
TLM modelling of diffusion, drift and re
β
M. Y. Al-Zeben; A. H. M. Saleh; M. A. Al-Omar
π
Article
π
1992
π
John Wiley and Sons
π
English
β 442 KB
Recombination of nonequilibrium charge c
β
V.K. Eremin; I.N. Ilyashenko; N.B. Strokan; B. Schmidt
π
Article
π
1996
π
Elsevier Science
π
English
β 497 KB
Transfer mechanisms of nonequilibrium ch
β
Basyk, A. I. ;Kovalenko, V. F. ;Peka, G. P.
π
Article
π
1983
π
John Wiley and Sons
π
English
β 423 KB
Fluctuations in the number of charge car
β
R.E. Burgess
π
Article
π
1954
π
Elsevier Science
β 227 KB
Motion and recombination of charge carri
β
B. Reimer; H. BΓ€ssler
π
Article
π
1976
π
Elsevier Science
π
English
β 333 KB
From photocurrcnt transients cxcitcd by 3 ruby laser y/~ = (6.3 f 1.5) X 10d V cm is dcrivcd for the ratio of Qrrier recombination coefficient to mobility in polydiacctylcnc-bis (tolucncsulfonate) single crystals. The sum of elccuon and hole mobility in chain direction is 2.8 cm2/V s with 1 uncertai
The mobility of charge carriers in a siz
β
Aram Kh. Manaselyan; Mher M. Aghasyan; Albert A. Kirakosyan
π
Article
π
2002
π
Elsevier Science
π
English
β 188 KB