A model for the performance analysis and design of waveguide p-i-n photodetectors
β Scribed by Das, N.R.; Deen, M.J.
- Book ID
- 114617749
- Publisher
- IEEE
- Year
- 2005
- Tongue
- English
- Weight
- 822 KB
- Volume
- 52
- Category
- Article
- ISSN
- 0018-9383
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π SIMILAR VOLUMES
## Abstract Using commercial and homemade simulation tools, this letter investigates how the geometrical and technological parameters of the __pβiβn__ junction, particularly the __p__^+^β and __n__^+^βregions, influence the electrical and optical performances of GaAs __pβiβn__ lumped and travelingβ
In this paper, the performance is analyzed for the P 1 Β±p 2 Β±n and N 1 Β±n 2 Β±p hetero-and homojunction GaSb/Ga 0.8 In 0.2 As 0.19 Sb 0.81 photodetectors operated at 300 K, based on the incident wavelength and the parameters of GaSb and Ga 0.8 In 0.2 As 0.19 Sb 0.81 . The analyzed results show that t