A model for the breakdown characteristics of p-channel 4OS transistor protection devices: H. Maes, P. Six and W. Sansen Solid-St. Electron. 24, 523 (1981)

• Book ID: 104157072
• Publisher: Elsevier Science
• Year: 1983
• Tongue: English
• Weight: 104 KB
• Volume: 14
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/s0026-2692(83)80192-x