A model for the breakdown characteristics of p-channel MOS transistor protection devices: H. Maes, P. Six and W. Sansen. Solid-St. Electron.24, 523 (1981)

• Publisher: Elsevier Science
• Year: 1981
• Tongue: English
• Weight: 120 KB
• Volume: 21
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(81)90174-8