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A model for specific contact resistance applicable for titanium silicide-silicon contacts

✍ Scribed by K. Varahramyan; E.J. Verret


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
572 KB
Volume
39
Category
Article
ISSN
0038-1101

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Low resistivity ohmic contacts on 4H-sil
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We investigated titanium based ohmic contacts using co-evaporated epitaxial titanium carbide (TiC) on highly 1 1 doped n -and p -type epilayers as well as Al ion implanted layers for high power and high temperature device application. Epitaxially grown TiC ohmic contacts on epilayers as well as Al i