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A method to determine minority carrier lifetime in GaAs light-emitting diodes

✍ Scribed by J. Müller; H. Reichl; H. Bernt


Publisher
Elsevier Science
Year
1979
Tongue
English
Weight
309 KB
Volume
22
Category
Article
ISSN
0038-1101

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It is shown that in undoped semi-insulating GaAs crystals grown under the stoichiometric conditions both correlated and anticorrelated dependences of the minority carrier lifetime T on the dislocation density Nd could be observed. The above-pointed effect is connected with a slight excess of Ga atom