𝔖 Bobbio Scriptorium
✦   LIBER   ✦

A method for doping fluctuations measurement in high resistivity silicon

✍ Scribed by Castoldi, A.; Chinnici, S.; Gatti, E.; Longoni, A.; Sampietro, M.; Vacchi, A.; Rehak, P.

Book ID
117997879
Publisher
American Institute of Physics
Year
1992
Tongue
English
Weight
950 KB
Volume
71
Category
Article
ISSN
0021-8979

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

A method for non-destructive resistivity
A method for non-destructive resistivity mapping in silicon detectors
✍ L. Bardelli; G. Poggi; G. Pasquali; M. Bini πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 625 KB

It is well known that the resistivity non-uniformity of silicon detectors is a crucial parameter when pulse-shape analysis is used to identify the charge and the mass of stopped heavy ions. In this work a method is described that allows a direct absolute resistivity measurement of the detector as a