✦ LIBER ✦

A linear-sweep MOS-C technique for determining minority carrier lifetimes

✍ Scribed by Pierret, R.F.

Book ID: 114590321
Publisher: IEEE
Year: 1972
Tongue: English
Weight: 473 KB
Volume: 19
Category: Article
ISSN: 0018-9383
DOI: 10.1109/t-ed.1972.17511

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Comments on "A linear-sweep MOS-C techni

Comments on "A linear-sweep MOS-C technique for determining minority carrier lifetimes"

✍ Grinthal, E.T. 📂 Article 📅 1973 🏛 IEEE 🌐 English ⚖ 132 KB

Simultaneous determination of minority-c

Simultaneous determination of minority-carrier lifetime and deep doping profile using a double-sweep MOS-C technique

✍ Shi-Tron Lin 📂 Article 📅 1983 🏛 IEEE 🌐 English ⚖ 405 KB

A modified linear sweep technique for MO

A modified linear sweep technique for MOS-C generation rate measurements

✍ Pierret, R.F.; Small, D.W. 📂 Article 📅 1975 🏛 IEEE 🌐 English ⚖ 254 KB

Graphical technique to determine minorit

Graphical technique to determine minority carrier lifetime and surface generation velocity using triangular-voltage sweep C-V method

✍ K. Taniguchi 📂 Article 📅 1978 🏛 Elsevier Science 🌐 English ⚖ 387 KB

The double sweep HF-CV technique for gen

The double sweep HF-CV technique for generation lifetime determination in MOS capacitors

✍ Roland Sorge 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 177 KB

Determination of recombination lifetime

Determination of recombination lifetime in MOS structures by a sine voltage-sweep technique

✍ P. Peykov; T. Diaz; M. Aceves 📂 Article 📅 2002 🏛 Elsevier Science 🌐 English ⚖ 100 KB

A sine-voltage technique for measurements of recombination lifetime in metal oxide semiconductor (MOS) structures is proposed. When a fast sine-voltage sweep ramp is applied to the gate of an MOS capacitor a non-equilibrium depletion layer is formed and electron-hole generation starts in the space-c