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A kinetic study of the incorporation of impurities during the epitaxial growth of silicon : J. P. Duchemin. Revue Technique Thomson-CSF9, (2) 411 (June 1977). (In French.)

Publisher: Elsevier Science
Year: 1978
Tongue: English
Weight: 131 KB
Volume: 17
Category: Article
ISSN: 0026-2714
DOI: 10.1016/0026-2714(78)91260-x

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