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A kinetic model for the incorporation of dopants during vapour phase epitaxy of III–V compounds

✍ Scribed by K. Jacobs


Book ID
107789438
Publisher
Elsevier Science
Year
1982
Tongue
English
Weight
534 KB
Volume
56
Category
Article
ISSN
0022-0248

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Silicon regions amorphized by high dose ion implantation recrystallize under high temperature treatment. Driven by a lower configuration energy of dopant atoms in the amorphized phase than in the crystalline phase, dopant atoms are pushed in the direction of recrystallization during solid phase epit