A hybrid finite element/finite differenc
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A. Monorchio; A. Cidronali; G. Manara; G. Pelosi
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Article
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2000
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John Wiley and Sons
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English
โ 273 KB
๐ 2 views
A comprehensive simulation procedure is presented for describing the behaviour of high-frequency "eld e!ect transistors (FETs). It combines a circuit model of the intrinsic part of the device with a hybrid "nite elements/"nite di!erences (FE/FD) technique directly implemented in time domain (TD). Th