A highly reliable press packed IGBT

✍ Scribed by Hideo Matsuda; Noriyasu Kawamura; Michiaki Hiyoshi; Satoshi Teramae; Kazunobu Nishitani

• Book ID: 102662150
• Publisher: John Wiley and Sons
• Year: 2000
• Tongue: English
• Weight: 944 KB
• Volume: 131
• Category: Article
• ISSN: 0424-7760
• DOI: 10.1002/(sici)1520-6416(20000415)131:1<78::aid-eej8>3.0.co;2-3

✦ Synopsis

A newly developed press packed reverse conducting IGBT (RCIGBT), the ST1000EX21, having ratings of 2500 V and 1000 A, has successfully been introduced in highreliability application areas. A multiple-chip press packed RCIGBT structure, containing IGBT chips and fast recovery diode (FRD) chips, has been achieved by using basic experimental results and a stress analysis using the finite element structure analysis program ABAQUS. Excellent electrical characteristics, especially a robust turn-off capability, such as I c = 5000 A, V cp = 2800 V at T j = 125 °C, have been obtained. High reliability, withstanding a thermal cycling (fatigue) test of more than 50,000 cycles and a high-temperature voltage blocking test for 2000 hours, has been confirmed. The device is now available and is being successfully used for transportation systems and other applications that require high reliability and long-term stability. Voltage and current ratings in IGBTs and IEGTs (Injection Enhanced Gate Transistors) will be raised in the future.