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A high-power and high-gain X-band Si/SiGe/Si heterojunction bipolar transistor

✍ Scribed by Zhenqiang Ma; Mohammadi, S.; Bhattacharya, P.; Katehi, L.P.B.; Alterovitz, S.A.; Ponchak, G.E.

Book ID: 114554330
Publisher: IEEE
Year: 2002
Tongue: English
Weight: 330 KB
Volume: 50
Category: Article
ISSN: 0018-9480
DOI: 10.1109/22.993412

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