𝔖 Bobbio Scriptorium
✦   LIBER   ✦

A High-Frequency MOS Transistor Model and its Effects on Radio-Frequency Circuits

✍ Scribed by Steve H. Jen; Christian Enz; David R. Pehlke; Michael Schro¨ter; Bing J. Sheu

Book ID
110263711
Publisher
Springer
Year
2000
Tongue
English
Weight
184 KB
Volume
23
Category
Article
ISSN
0925-1030

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## Abstract Noise analysis for AlGaAs/GaAs HEMT and AlGaAs/InGaAs/GaAs PHEMT is developed at microwave frequency using an accurate charge control approach. The small‐signal parameters and the drain and gate‐noise sources are calculated to determine the noise coefficients and correlation coefficient