## Abstract A new method for the determination of a distributed FET noise model is presented. It is based on the extraction of the intrinsic noiseโcorrelation matrix of an elemental section of the device from the device's noise figure, measured for only one sourceโimpedance state at a number of fre
โฆ LIBER โฆ
A gauge for measuring the geometric characteristics of fibers based on a semiconductor emission source
โ Scribed by L. P. Lazarev; S. D. Mirovitskaya
- Publisher
- Springer US
- Year
- 1987
- Tongue
- English
- Weight
- 224 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0543-1972
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