High power picosecond pulse generation from a two-contact tapered two quantum well 980 nm InGaAs / GaAs diode laser is investigated using a passive Q-switching technique for the first time. Tail-free and single peak Q-switched pulses are obtained by applying reverse bias voltages in the range of 0 t
A GaAs–InGaAs optoelectronic switch with multiple operation states
✍ Scribed by Der-Feng Guo
- Book ID
- 111565387
- Publisher
- Springer
- Year
- 2000
- Tongue
- English
- Weight
- 89 KB
- Volume
- 32
- Category
- Article
- ISSN
- 0306-8919
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
A new GaAs double triangular barrier (DTB) switch, prepared by molecular-beam epitaxy (MBE), using p+-n-6(p+)-n-8(p+)-n n + structure was fabricated and demonstrated. A tristate switching behaviour due to the sequential collapse of internal barriers was clearly observed for the first time. This phen
We have realized a reflection-type electro-optic InGaAs/GaAs multiple quantum well (MQW) modulator using an organic-inorganic distributed Bragg reflector (DBR). The MQW active layer is embedded in the intrinsic region of a p-i-n diode. The DBR consists of few pairs of CF x /TiO x layers, fabricated