This article thoroughly analyzes a concurrent dual-band low-noise amplifier (LNA) and carefully examines the effects of both active and passive elements on the performance of the dual-band LNA. As an example of the analysis, a fully integrated dual-band LNA is designed in a standard 0.18-m 6M1P CMOS
β¦ LIBER β¦
A Fully Differential Band-Selective Low-Noise Amplifier for MB-OFDM UWB Receivers
β Scribed by Siu-Kei Tang; Kong-Pang Pun; Chiu-Sing Choy; Cheong-Fat Chan; Ka Nang Leung
- Book ID
- 118054036
- Publisher
- Institute of Electrical and Electronics Engineers
- Year
- 2008
- Tongue
- English
- Weight
- 684 KB
- Volume
- 55
- Category
- Article
- ISSN
- 1549-7747
No coin nor oath required. For personal study only.
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## Abstract A fully integrated dualβband lowβnoise amplifier (LNA) implemented in a standard 0.18βΞΌm 1P6M CMOS process is presented in this paper. The LNA draws 12βmA current from a 1.5βV voltage supply and achieves power gains of 25 and 10 dB, and noise figures of 3.6 and 4 dB at 2.4 and 5.6 GHz r