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A frequency-domain approach to interconnect crosstalk simulation and minimization

✍ Scribed by José Ernesto Rayas-Sánchez


Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
347 KB
Volume
44
Category
Article
ISSN
0026-2714

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A comprehensive simulation procedure is presented for describing the behaviour of high-frequency "eld e!ect transistors (FETs). It combines a circuit model of the intrinsic part of the device with a hybrid "nite elements/"nite di!erences (FE/FD) technique directly implemented in time domain (TD). Th