𝔖 Bobbio Scriptorium
✦   LIBER   ✦

A finite difference model For cMUT devices

✍ Scribed by Certon, D.; Teston, F.; Patat, F.

Book ID
120612574
Publisher
IEEE
Year
2005
Tongue
English
Weight
841 KB
Volume
52
Category
Article
ISSN
0885-3010

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

A finite difference model for the kineti
A finite difference model for the kinetics of sensitization
✍ B.W. Bennett; H.W. Pickering πŸ“‚ Article πŸ“… 1988 πŸ› Elsevier Science βš– 972 KB

This paper reports on the development of a finite difference model of the sensitization process. The model can be applied to alloy systems in which diffusion of one component to and within the grain boundary determines the rate of precipitation in the boundary. An example application of the model to

A Finite Difference Scheme Solving the B
A Finite Difference Scheme Solving the Boltzmann–Poisson System for Semiconductor Devices
✍ A. Majorana; R.M. Pidatella πŸ“‚ Article πŸ“… 2001 πŸ› Elsevier Science 🌐 English βš– 213 KB

The Boltzmann equation describing electron flow in semiconductor devices is considered. The collision operator models the scattering processes between free electrons and phonons in thermal equilibrium. The doping profile and the self-consistent electric field are related by the Poisson equation. The