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A field-ionization mechanism for a high refractive nonlinearity in heavily doped n-GaAs

✍ Scribed by F. Agulló-López; F.V. Karpushko


Book ID
103320633
Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
406 KB
Volume
100
Category
Article
ISSN
0030-4018

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## Abstract The theoretical study of linear and nonlinear optical absorption, and the nonlinear corrections to the refractive index in a GaAs n‐type delta‐doped field effect transistor is preformed taking into account the effects of applied hydrostatic pressure on the quantum well energy states, th