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A mechanism of threshold voltage changes for WNx gate GaAs MESFETs in high temperature storage life tests

✍ Scribed by Y. Kitaura; K. Ishida; T. Mizoguchi; N. Uchitomi; T. Matsunaga; M. Mochizuki; R. Nii


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
463 KB
Volume
35
Category
Article
ISSN
0026-2714

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