A theoretical model of the dual-gate MESFET including electromagnetic propagation effects is presented. The quasistatic approach is induced by the presence of a constant volumic charge density in the depletion layer when the device operates under the slow-wave Schottky mode. Device features are anal
A dual approach for matrix-derivatives
β Scribed by W. Polasek
- Publisher
- Springer
- Year
- 1985
- Tongue
- English
- Weight
- 579 KB
- Volume
- 32
- Category
- Article
- ISSN
- 0026-1335
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