A 176-190 GHz transmitter module using i
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John W. Archer; Mei Gan Shen
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Article
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2005
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John Wiley and Sons
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English
β 127 KB
## Abstract This paper describes a doubleβsideband, upconverting transmitter module with a potential application to futureβgeneration pointβtoβpoint telecommunications in the 176β190βGHz band. The multichip module incorporates indium phosphide (InP) and gallium arsenide (GaAs) monolithic microwave