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A D.C. to 16 GHz indium phosphide MISFET

✍ Scribed by L. Messick


Book ID
103393413
Publisher
Elsevier Science
Year
1980
Tongue
English
Weight
305 KB
Volume
23
Category
Article
ISSN
0038-1101

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A 176-190 GHz transmitter module using i
✍ John W. Archer; Mei Gan Shen πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 127 KB

## Abstract This paper describes a double‐sideband, upconverting transmitter module with a potential application to future‐generation point‐to‐point telecommunications in the 176–190‐GHz band. The multichip module incorporates indium phosphide (InP) and gallium arsenide (GaAs) monolithic microwave