## Abstract In this paper the effects of different noise sources in a four‐gate field‐effect‐transistor have been studied and quantified in different operation regimes of the structure. To carry out this study, a model that captures the main features of generation–recombination noise, produced by t
✦ LIBER ✦
A cooled amplifier with field effect transistors having a noise temperature of 1K
✍ Scribed by L.L. Ananév; A.M. Pozharov; N.V. Egorov
- Publisher
- Elsevier Science
- Year
- 1978
- Tongue
- English
- Weight
- 153 KB
- Volume
- 18
- Category
- Article
- ISSN
- 0011-2275
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