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A concise and complete solution for linearly graded p-n junctions

✍ Scribed by C. Jindal; P. Panayotatos

Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
402 KB
Volume
31
Category
Article
ISSN
0038-1101

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## Abstract Structures composed of a p^++^(Zn)GaAs layer deposited by MOVPE on a n(Te)‐doped GaSb substrate were fabricated, with the purpose of obtaining GaSb p‐n homo‐junctions, through the diffusion of Zn into the substrate, for photovoltaic applications. Different Zn doping levels and post‐grow