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crystal growth, has made substantial progress in many areas in the last decade. Crystals with a diameter of 125mm have been grown; crystals with smaller diameters have had lengths of 150cm. Uniform resistivity profiles, including the virtual elimination of resistivity striations, can be obtained by neutron-transmutation doping. Micro-defects such as B-pits have been eliminated both in elemental and neutron-transmutation doped crystals. Attemps to improve the high-temperature properties of float-zoned wafers appear promising. In the fabrication of detector-grade silicon requiring very high resistivities, float-zoned material has no peer. The first growth of silicon in space will utilize the principles of float-zoning.
Developments in crystal growth from high-temperature solutions HANS J. SCHEEL Prog. Crystal Growth Char., 5, 277 (1982) With the technological advances in the past 12 years, and with the high quality of flux-grown crystals and layers, this crystal-growth technique has become increasingly important. The technological parameters which have to be optimized to achieve large structuaUy perfect crystals, of high purity and free of striations, are: choice of solvent, growth temperature and its control, temperature gradient at and along the growth interface, supersaturation, and hydrodynamics. Top-seeded solution growth and the accelerated crucible rotation technique are the most widely applied techniques for growth of large high-qulity crystals.
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