𝔖 Bobbio Scriptorium
✦   LIBER   ✦

A comparison of the effects of gamma irradiation on SiGe HBT and GaAs HBT technologies

✍ Scribed by Zhang, S.; Niu, G.; Cressler, J.D.; Mathew, S.J.; Gogineni, U.; Clark, S.D.; Zampardi, P.; Pierson, R.L.

Book ID
121716397
Publisher
IEEE
Year
2000
Tongue
English
Weight
231 KB
Volume
47
Category
Article
ISSN
0018-9499

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Comparison of wideband Gilbert micromixe
Comparison of wideband Gilbert micromixers using SiGe HBT and GaInP/GaAs HBT technologies
✍ Jin-Siang Syu; Chinchun Meng; Chih-Kai Wu; Guo-Wei Huang πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 281 KB

## Abstract Wideband downconversion mixers are demonstrated by using both 0.35‐μm SiGe heterojunction bipolar transistor (HBT) and 2‐μm GaInP/GaAs HBT technologies. A micromixer topology is implemented in the RF port while a differential type shunt–shunt feedback amplifier and a differential‐to‐sin