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A comparison of shallow and deep iron silicide layers fabricated by ion beam synthesis

✍ Scribed by T.D. Hunt; K.J. Reeson; R.M. Gwilliam; K.P. Homewood; R.J. Wilson; B.J. Sealy; C.D. Meekison; G.R. Booker; P. Oberschachtsiek


Book ID
113283491
Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
246 KB
Volume
80-81
Category
Article
ISSN
0168-583X

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## Abstract We have studied the ion‐beam synthesis of GaSb nanocrystals in Si by high‐fluence implantation of Sb and Ga ions followed by thermal annealing. RBS, TEM/TED, RS, and photoluminescence (PL) were employed to characterize the implanted layers. It was found that the nanocrystals size increa