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A comparison of orthogonal sp-based tight-binding models for silicon

✍ Scribed by Paul D. Godwin; Amanda Killen Roberts; Decai Yu; Kate Dean; Paulette Clancy


Book ID
117626559
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
166 KB
Volume
21
Category
Article
ISSN
0927-0256

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Tight-binding model for the electronic a
✍ S. Schulz; D. Mourad; S. Schumacher; G. Czycholl πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 849 KB

## Abstract Two slightly different, efficient tight‐binding (TB) models for the description of the electronic properties of nitride‐based semiconductor quantum dots (QDs) have been developed and applied to the calculation of the electronic one‐particle spectrum of these structures. Using these one‐