Tight-binding model for the electronic a
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S. Schulz; D. Mourad; S. Schumacher; G. Czycholl
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Article
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2011
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John Wiley and Sons
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English
β 849 KB
## Abstract Two slightly different, efficient tightβbinding (TB) models for the description of the electronic properties of nitrideβbased semiconductor quantum dots (QDs) have been developed and applied to the calculation of the electronic oneβparticle spectrum of these structures. Using these oneβ