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A comparative study of the photoluminescence properties of a-SiOx:H film and silicon nanocrystallites

✍ Scribed by I. Umezu; K. Yoshida; A. Sugimura; T. Inokuma; S. Hasegawa; Y. Wakayama; Y. Yamada; T. Yoshida

Book ID
117150422
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
87 KB
Volume
266-269
Category
Article
ISSN
0022-3093

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A simple reactive evaporation method is proposed to prepare light-emitting SiO x thin films. Pure silicon is evaporated in a controlled molecular oxygen atmosphere. By changing the pressure in the preparation chamber, x can be varied from 0.7 to 1.85. The samples were annealed in the range 350-1100