The diagnostic potential of reΓected electron energy-loss microscopy (REELM) and scanning Auger microscopy (SAM) are explored with respect to two particular aspects encountered in the surface microchemical analysis of semiconductor materials : determining the kind of coverage, i.e. whether continuou
β¦ LIBER β¦
A comparative reflection electron energy loss study of C60 and graphite
β Scribed by H. Cohen; E. Kolodney; T. Maniv; M. Folman
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 323 KB
- Volume
- 81
- Category
- Article
- ISSN
- 0038-1098
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