A Compact Physical Model for Yield Under Gate Length and Body Thickness Variations in Nanoscale Double-Gate CMOS

✍ Scribed by Ananthan, H.; Roy, K.

• Book ID: 114618387
• Publisher: IEEE
• Year: 2006
• Tongue: English
• Weight: 513 KB
• Volume: 53
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2006.880365