Hole emission from single and vertically coupled quantum dots (SQD and VCQD) in InAs/GaAs p-n heterostructures under varied reverse bias and the influence exerted on this process by the Coulomb interaction between the quantum dots and point defects situated near the dots has been studied by capacita
A combined investigation of lateral and vertical Stark effect in InAs self-assembled quantum dots in waveguide structures
✍ Scribed by O Wolst; M Schardt; M Kahl; S Malzer; G.H Döhler
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 400 KB
- Volume
- 13
- Category
- Article
- ISSN
- 1386-9477
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✦ Synopsis
An investigation of the transmission spectra as a function of electric ÿeld and light polarization in self-assembled InAs quantum dots has been performed. To have access to both vertical and lateral ÿelds with respect to the growth direction, and to allow for polarization-dependent measurements, the samples were fabricated as waveguide structures. In the case of the vertical ÿeld, a quadratic Stark e ect is observed not only in the TE-mode, but also in the TM-mode indicating the participation of light holes. In the lateral ÿeld, no Stark shift is observed, but there is a strong change in oscillator strength.
📜 SIMILAR VOLUMES
Using the effective mass and parabolic band approximations and a variational procedure we have calculated the combined effects of intense laser radiation, hydrostatic pressure, and applied electric field on shallow-donor impurity confined in cylindrical-shaped single and double GaAs-Ga 1-x Al x As Q