## Abstract A __g__~m~‐boosted complementary Colpitts differential voltage‐controlled oscillator (VCO) is proposed and implemented in a 0.18‐μm CMOS 1P6M process.It consists of two single‐ended p‐core Colpitts oscillators via __g__~m~‐enhanced cross‐coupled Colpitts transistors to obtain a differen
A CMOS Colpitts voltage controlled oscillator with an enhanced transconductance method
✍ Scribed by Ching-Ian Shie; Yi-Chyun Chiang
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 686 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
This work presents a technique to enhance the performance of the conventional PMOS Colpitts VCO circuit. This technique is accomplished by adding an NMOS cross‐coupled pair under the traditional differential Colpitts VCO to enhance the oscillator startup condition. The signal analysis also supports this viewpoint and presents a device‐choosing method to optimize the output power and phase noise. In realization, the circuit in the CMOS 0.18‐μm technology, a U‐shaped inductor, and thick oxide varactors are adopted in circuit to increase the quality factor of resonant tank. The performance of VCO demonstrates a center frequency of 16.7 GHz, a FOM of −186.2 dBc/Hz, and the phase noise of −110.42 dBc/Hz at the 1 MHz offset from the oscillation frequency. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 3160–3164, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23944
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## Abstract A new fully integrated, dual‐band CMOS voltage controlled oscillator (VCO) is presented. The VCO is composed of two complementary Colpitts VCOs and is implemented in 0.18‐μm CMOS technology with 2‐V supply voltage. The circuit allows the VCO to operate at two resonant frequencies with a
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