A Charge-Based Model for Long-Channel Cylindrical Surrounding-Gate MOSFETs From Intrinsic Channel to Heavily Doped Body

✍ Scribed by Feng Liu; Jin He; Lining Zhang; Jian Zhang; Jinghua Hu; Chenyue Ma; Mansun Chan

• Book ID: 114619497
• Publisher: IEEE
• Year: 2008
• Tongue: English
• Weight: 1007 KB
• Volume: 55
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2008.926735