A calculation of intensity of angle-resolved photoemission of the (110) surface of fcc metal
โ Scribed by Matti Lindroos
- Publisher
- Elsevier Science
- Year
- 1985
- Weight
- 50 KB
- Volume
- 152-153
- Category
- Article
- ISSN
- 0167-2584
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๐ SIMILAR VOLUMES
conduction band potential obtained from the threshold measurements shows only a small deviation from a fiat band, less than โข i 0.05 eV, tip to a point 4 A, from the silicon surface. There is no indication of a large ionic charge or of a greatly reduced SiO, bandgap to within about two lattice units
The electronic structure of Ni 2 P(10 10) has been investigated by photoemission spectroscopy (PES) utilizing synchrotron radiation. The surface prepared by Ar + ion sputtering (3 kV, 15 min) and annealing (400 ยฐC) gave a c(4 ร2) low-energy electron diffraction pattern. In the PES spectra measured f