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Angle resolved photoemission study of surface core states in W(110)

✍ Scribed by Y. Jugnet; N.S. Prakash; Tran Minh Duc; H.C. Poon; G. Grenet; J.B. Pendry

Publisher
Elsevier Science
Year
1987
Weight
47 KB
Volume
189-190
Category
Article
ISSN
0167-2584

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2510. Angle-resolved photoemission studi
2510. Angle-resolved photoemission studies of surface states on (110) GaAs
πŸ“‚ Article πŸ“… 1977 πŸ› Elsevier Science 🌐 English βš– 150 KB

conduction band potential obtained from the threshold measurements shows only a small deviation from a fiat band, less than β€’ i 0.05 eV, tip to a point 4 A, from the silicon surface. There is no indication of a large ionic charge or of a greatly reduced SiO, bandgap to within about two lattice units