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A bipolar ECL static RAM using polysilicon-diode loaded memory cell

โœ Scribed by Hwang, B.-Y.; Bushey, T.P.; Kirchgessner, J.A.; Foertsch, S.A.; Stipanuk, J.J.; Marshbanks, L.; Hernandez, J.A.; Herald, E.R.

Book ID
119773753
Publisher
IEEE
Year
1989
Tongue
English
Weight
729 KB
Volume
24
Category
Article
ISSN
0018-9200

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A study of static RAM cell using the lam
A study of static RAM cell using the lambda bipolar transistor (LBT)
โœ Manju Sarkar; M. Satyam; A. Prabhakar ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 531 KB

The bistable element of an SRAM cell, comprised the LBT in the common-collector configuration along with a couple of polysilicon resistors (as proposed in the literature), has been studied. Under the present study a similar case has been visualized and studied with the LBT in commonemitter configura