✦ LIBER ✦

A 600 V AlGaN/GaN Schottky barrier diode on silicon substrate with fast reverse recovery time

✍ Scribed by Yue-Ming Hsin; Tsung-Yu Ke; Geng-Yen Lee; Jen-Inn Chyi; Hsien-Chin Chiu

No coin nor oath required. For personal study only.

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AlGaN/GaN Schottky Barrier Diodes on Sil

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840 V/6 A-AlGaN/GaN Schottky Barrier Dio

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