✦ LIBER ✦
840 V/6 A-AlGaN/GaN Schottky Barrier Diode With Bonding Pad Over Active Structure Prepared on Sapphire Substrate
✍ Scribed by Lee, J.-H.; Yoo, J.-K.; Kang, H.-S.; Lee, J.-H.
- Book ID
- 111989326
- Publisher
- IEEE
- Year
- 2012
- Tongue
- English
- Weight
- 369 KB
- Volume
- 33
- Category
- Article
- ISSN
- 0741-3106
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