## Abstract This article presented a highly linear image‐rejection (IR) low‐noise amplifier (LNA) for 2.4 GHz band applications based on 0.18 μm CMOS technology. By using folded PMOS for sinking the third‐order intermodulation distortion (IMD3), the IR LNA has high input third‐order intercept point
A 5.7-GHz low-noise amplifier with source-degenerated active inductor
✍ Scribed by Chun-Hsueh Chu; I-Lun Huang; Yih-Hsia Lin; Jeng Gong
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 264 KB
- Volume
- 51
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
This article presents a novel application of the active inductor in the design of the low‐noise amplifier (LNA). To reduce the silicon area consumed by the LNA without sacrificing its linearity, the passive source‐degenerated inductor in the conventional design is replaced with the active inductor. The LNA is fabricated with a standard 0.18‐μm CMOS process. Compared with previous arts, this LNA exhibits good figure of merit based on its total power consumption of 19 mW, measured power gain of 17 dB, input third‐order intercept point of −7 dBm, and noise figure of 3.4 dB at 5.7 GHz. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 1955–1958, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24493
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## Abstract A variable gain low noise amplifier (VGLNA) using a 0.35 μm SiGe HBT process is described. A VGLNA with linear gain control and high linearity has been developed for 2.4 GHz ISM band applications. The gain control circuit is achieved without degrading either the input or the output VSWR