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A 4H-SiCp-i-ndiode fabricated by a combination of sublimation epitaxy and CVD

✍ Scribed by E. V. Bogdanova; A. A. Volkova; A. E. Cherenkov; A. A. Lebedev; R. D. Kakanakov; L. P. Kolaklieva; G. A. Sarov; T. M. Cholakova; A. V. Kirillov; L. P. Romanov

Book ID
110143156
Publisher
Springer
Year
2005
Tongue
English
Weight
63 KB
Volume
39
Category
Article
ISSN
1063-7826

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Carrier lifetime investigation in 4H–SiC
Carrier lifetime investigation in 4H–SiC grown by CVD and sublimation epitaxy
✍ P. Grivickas; A. Galeckas; J. Linnros; M. SyvΓ€jΓ€rvi; R. Yakimova; V. Grivickas; πŸ“‚ Article πŸ“… 2001 πŸ› Elsevier Science 🌐 English βš– 219 KB

Depth-resolved carrier lifetime measurements were performed in low-doped epitaxial layers of 4H silicon carbide samples. The technique used was a pump-and-probe technique where carriers are excited by an above-bandgap laser pulse and probed by free carrier absorption. Results from chemical vapour de