A concurrent multiband InGaP-GaAs HBT LN
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Yo-Sheng Lin; Kun-Nan Liao
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Article
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2005
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John Wiley and Sons
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English
β 202 KB
A temperature-insensitive (Οͺ25Β°C-175Β°C) monolithic concurrent multiband low-noise amplifier (LNA) for 1.8/1.9-GHz GSM, 2.4/4.9/5.2/5.7-GHz WLAN, and 5-7-GHz ultra-wideband (UWB) system applications is realized using a low-cost 2-m InGaP-GaAs HBT technology. The first stage of the LNA provides high g