A 3.3-V, 4-Mb nonvolatile ferroelectric RAM with selectively driven double-pulsed plate read/write-back scheme

✍ Scribed by Yeonbae Chung; Byung-Gil Jeon; Kang-Deog Suh

• Book ID: 119775570
• Publisher: IEEE
• Year: 2000
• Tongue: English
• Weight: 387 KB
• Volume: 35
• Category: Article
• ISSN: 0018-9200
• DOI: 10.1109/4.841494