A 0.4-/spl mu/m 3.3-V 1T1C 4-Mb nonvolatile ferroelectric RAM with fixed bitline reference voltage scheme and data protection circuit

✍ Scribed by Byung-Gil Jeon; Mun-Kyu Choi; Yoonjong Song; Seung-Kyu Oh; Yeonbae Chung; Kang-Deog Suh; Kinam Kim

• Book ID: 118261133
• Publisher: IEEE
• Year: 2000
• Tongue: English
• Weight: 254 KB
• Volume: 35
• Category: Article
• ISSN: 0018-9200
• DOI: 10.1109/4.881216