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A 3–10 GHz CMOS UWB Low-Noise Amplifier With ESD Protection Circuits

✍ Scribed by Chung-Yu Wu, ; Yi-Kai Lo, ; Min-Chiao Chen,

Book ID
125885869
Publisher
IEEE
Year
2009
Tongue
English
Weight
475 KB
Volume
19
Category
Article
ISSN
1531-1309

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## Abstract In this article, a small‐sized 3–10 GHz CMOS LNA for ultra‐wideband (UWB) applications is presented. To reduce 2 on‐chip inductors, wire bond inductors are used instead of input inductor of multisectional reactive network and source degeneration inductor. The noise figure of low‐noise a